Next Generation Solar Cell and
Module Laser Processing System
Laser Doping Process

  • Detailed Objectives

    • Development of a laser doping process for selective emitter creation

    • Highly productive laser-based doping by use of fast scanning technologies

    • Production and evaluation of selective emitter cells

  • Main Project Achievements
    Laser doping for selective emitters was studied using laser sources with 532 nm wavelength and variable pulse duration. Residual phosphosilicate glass from the standard emitter diffusion was used as dopant source. The process development showed that long pulse durations (>100 ns) are beneficial for a robust, easy-to-control diffusion process.

    Laser doping could be demonstrated on the semi-automated equipment at Manz. In a study using 9 different parameter settings on 15 cells per setting, the doping process was conducted. The post-processing to full cells and evaluation resulted in an efficiency gain of 0.15% without any adaptations of the cell production sequence (except adding the laser doping step). The process relied on the use of galvo scanners for speed and flexibility. In contrast to other approaches, scanners allow any geometry of the selective emitter, enabling the use in complex cell designs, like Solland’s Sunweb.

last update 2011-12-15 © SOLASYS 2008